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Preliminary Technical Information
TrenchMV TM
Power MOSFET
IXTH180N085T
IXTQ180N085T
V DSS
I D25
R DS(on)
= 85 V
= 180 A
≤ 5.5 m ?
N-Channel Enhancement Mode
Avalanche Rated
TO-247 (IXTH)
Symbol
V DSS
V DGR
Test Conditions
T J = 25 ° C to 175 ° C
T J = 25 ° C to 175 ° C; R GS = 1 M ?
Maximum Ratings
85 V
85 V
G
D
S
(TAB)
V GSM
I D25
I LRMS
I DM
Transient
T C = 25 ° C
Lead Current Limit, RMS
T C = 25 ° C, pulse width limited by T JM
± 20
180
75
480
V
A
A
A
TO-3P (IXTQ)
I AR
E AS
dv/dt
T C = 25 ° C
T C = 25 ° C
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS
T J ≤ 175 ° C, R G = 5 ?
25
1.0
3
A
J
V/ns
G
D
S
(TAB)
P D
T J
T JM
T stg
T C = 25 ° C
430
-55 ... +175
175
-55 ... +175
W
° C
° C
° C
G = Gate
S = Source
Features
D = Drain
TAB = Drain
T L
T SOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
300
260
° C
° C
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
M d
Mounting torque
1.13 / 10 Nm/lb.in.
rated
Low package inductance
Weight
TO-3P
TO-247
5.5
6
g
g
- easy to drive and to protect
175 ° C Operating Temperature
Advantages
Easy to mount
Space savings
Symbol Test Conditions
(T J = 25 ° C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
High power density
Applications
BV DSS
V GS(th)
I GSS
I DSS
R DS(on)
V GS = 0 V, I D = 250 μ A
V DS = V GS , I D = 250 μ A
V GS = ± 20 V, V DS = 0 V
V DS = V DSS
V GS = 0 V
V GS = 10 V, I D = 25 A, Note 1
T J = 150 ° C
85
2.0
4.2
4.0
± 200
5
250
5.5
V
V
nA
μ A
μ A
m ?
Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
Systems
High Current Switching
Applications
? 2006 IXYS CORPORATION All rights reserved
DS99701 (11/06)
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相关代理商/技术参数
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IXTQ182N055T 功能描述:MOSFET 182 Amps 55V 4.4 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTQ18N60P 功能描述:MOSFET 18.0 Amps 600 V 0.42 Ohm Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTQ200N06P 功能描述:MOSFET 200 Amps 60V 0.006 Ohm Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTQ200N075T 功能描述:MOSFET 200 Amps 75V 4.4 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTQ200N085T 功能描述:MOSFET 200 Amps 85V 5.0 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTQ200N10T 功能描述:MOSFET 200 Amps 100V 5.4 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
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